We report the first monolithic integration of selectively deposited bacteriorhodopsin (bR), acting as a photodetector, with a GaAs-based modulation doped field effect transistor (MODFET). The photovoltage developed across the bR is applied across the gate of the FET. In essence, the large photovoltage developed across bR is converted to a photocurrent. We believe these sensors will be extremely useful for imaging arrays and artificial vision applications.
A monolithically integrated bacteriorhodopsin/GaAs MODFET bio-photoreceiver
2001-01-01
145001 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
ThU2 A Monolithically Integrated Bacteriorhodopsin/GaAs MODFET Bio-Photoreceiver
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