Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In/sub 0.23/Ga/sub 0.77/As/GaN/sub x/As/sub 1-x/ heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5 /spl mu/m range.
Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5 /spl mu/m range
2005 Quantum Electronics and Laser Science Conference ; 2 ; 1053-1055 Vol. 2
2005-01-01
819027 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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