Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In/sub 0.23/Ga/sub 0.77/As/GaN/sub x/As/sub 1-x/ heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5 /spl mu/m range.


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    Titel :

    Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5 /spl mu/m range


    Beteiligte:
    Schlichenmaier, C. (Autor:in) / Thranhardt, A. (Autor:in) / Meier, T. (Autor:in) / Gruning, H. (Autor:in) / Klar, P.J. (Autor:in) / Heimbrodt, W. (Autor:in) / Koch, S.W. (Autor:in) / Chow, W.W. (Autor:in) / Hader, J. (Autor:in) / Moloney, J.V. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    2005-01-01


    Format / Umfang :

    819027 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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