The gain and photoluminescence dynamics is calculated microscopically for several GaInNAs structures. Carrier scattering rates are computed microscopically and implemented into a nonequilibrium gain model.


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    Titel :

    Gain and photoluminescence dynamics in dilute nitride semiconductor laser materials


    Beteiligte:
    Thranhardt, A. (Autor:in) / Schlichenmaier, C. (Autor:in) / Becker, S. (Autor:in) / Hantke, K. (Autor:in) / Heber, J.D. (Autor:in) / Ruhle, W.W. (Autor:in) / Koch, K.S. (Autor:in) / Hader, J. (Autor:in) / Moloney, J.V. (Autor:in) / Chow, W.W. (Autor:in)


    Erscheinungsdatum :

    2005-01-01


    Format / Umfang :

    550867 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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