The gain and photoluminescence dynamics is calculated microscopically for several GaInNAs structures. Carrier scattering rates are computed microscopically and implemented into a nonequilibrium gain model.
Gain and photoluminescence dynamics in dilute nitride semiconductor laser materials
(CLEO). Conference on Lasers and Electro-Optics, 2005. ; 1 ; 707-709 Vol. 1
2005-01-01
550867 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Gain and Photoluminescence Dynamics in Dilute Nitride Semiconductor Laser Materials
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