The development of vertical-cavity surface-emitting lasers (VCSELs) at the telecommunications important wavelength of 1.55 /spl mu/m has been hindered by the absence of a substrate that is suitable for both technologically-developed distributed Bragg reflectors (DBRs) and quantum well active regions. AlGaAsSb-based DBRs, however, which can be lattice-matched to InP and have a refractive index-contrast that is similar to AlGaAs-based DBRs at 1.3 /spl mu/m-1.55 /spl mu/m, offer the opportunity to combine the mature InP-based active region technology with high reflectivity mirrors in a single growth. We have recently reported, in fact, electrically-pumped, Sb-based vertical-cavity lasers operating at 1.55 /spl mu/m and produced in a single epitaxial growth. These lasers, which employ two n-type, lattice-matched AlGaAsSb mirrors and an AlInGaAs-based active region, had room temperature threshold current densities of 1.4 kA/cm/sup 2/ and an external quantum efficiency of /spl sim/18%. The VCSELs, unfortunately, suffered from a very high operating voltage. We present design changes that have significantly reduced this voltage and discuss future improvements that could lead to further reductions.


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    Titel :

    Design considerations in electrically-pumped, single-epitaxial VCSELs at 1.55 /spl mu/m with Sb-based mirrors


    Beteiligte:
    Hall, E. (Autor:in) / Almuneau, G. (Autor:in) / Kim, J.K. (Autor:in) / Sjolund, O. (Autor:in) / Kroemer, H. (Autor:in) / Coldren, L.A. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    164778 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch






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