Authors demonstrate the generation of broadband stimulated emission in the postgrowth wavelength tuned InAs/InAlGaAs quantum-dash (Qdash) laser grown on InP substrate. The laser exhibits room temperature lasing wavelength coverage of up to 50 nm at center wavelength of ~1.57 ¿m. Despite the bandgap blue-shift of ~70 nm after Qdash intermixing process, the laser exhibits a broadband signature of lasing linewidth, which is comparable to the as-grown laser. The integrity of the material is retained after intermixing, suggesting its potential application in the fabrication of monolitically-integrated ultra-broadband semiconductor Qdash laser.


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    Titel :

    Bandgap-Engineered Broadband Stimulated Emission in Semiconductor Quantum Dash Interband Laser


    Beteiligte:
    Djie, H. S. (Autor:in) / Tan, C. L. (Autor:in) / Dimas, C. E. (Autor:in) / Hongpingyo, V. (Autor:in) / Ding, Y. H. (Autor:in) / Ooi, B. S. (Autor:in)


    Erscheinungsdatum :

    01.12.2008


    Format / Umfang :

    746470 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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