Summary form only given. In this paper we present the photoluminescence (PL) spectrum and time-resolved PL spectrum of (311)- and (100)-oriented SLQWs, and the characteristics of (311)-oriented InGaAs/GaAs GRIN-SCH SLQW lasers. To the best of our knowledge, this is the first room temperature operation of low threshold-current density and high power InGaAs QW lasers grown on (311)A GaAs substrates.


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    Titel :

    High performance strained-layer InGaAs quantum well lasers grown on a (311)A GaAs substrate


    Beteiligte:
    Takahashi, M. (Autor:in) / Vaccaro, P. (Autor:in) / Fujita, I. (Autor:in) / Watanabe, T. (Autor:in) / Egawa, T. (Autor:in) / Niwano, Y. (Autor:in) / Jimbo, T. (Autor:in) / Umeno, M. (Autor:in)

    Erschienen in:

    Proceedings of LEOS'94 ; 1 ; 115-116 vol.1


    Erscheinungsdatum :

    01.01.1994


    Format / Umfang :

    159762 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    High Performance Strained-Layer InGaAs Quantum Well Lasers Grown on (311)A GaAs Substrates

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