Summary form only given. In this paper we present the photoluminescence (PL) spectrum and time-resolved PL spectrum of (311)- and (100)-oriented SLQWs, and the characteristics of (311)-oriented InGaAs/GaAs GRIN-SCH SLQW lasers. To the best of our knowledge, this is the first room temperature operation of low threshold-current density and high power InGaAs QW lasers grown on (311)A GaAs substrates.
High performance strained-layer InGaAs quantum well lasers grown on a (311)A GaAs substrate
Proceedings of LEOS'94 ; 1 ; 115-116 vol.1
01.01.1994
159762 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
High Performance Strained-Layer InGaAs Quantum Well Lasers Grown on (311)A GaAs Substrates
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