Although it has been known for many years that GaAs/AlGaAs quantum-well (QW) lasers exhibit low temperature sensitivity, or high characteristic temperatures, T/sub 0/, to our knowledge, optimization of the laser structure so as to maximize T/sub 0/ has never been shown. Previous work in GaAs/AlGaAs has been limited in scope, either only to Al content in the cladding layers and QW thickness, or to a small variety of numbers of quantum wells, n. There has also been work done on the influence of the number of wells in InP-based lasers at 1.3 /spl mu/m and 1.5 /spl mu/m wavelengths. In this paper, we present results of an experimental study on the variation of T/sub 0/ in graded-index, separate-confinement heterostructure GaAs/(Al,Ga)As QW lasers as a function of the Al content in the cladding layers at two different nominal values, and of the number of wells, ranging from n=l to 10.
Optimization of T/sub 0/ in GaAs/(Al,Ga)As, multiple-quantum-well GRINSCH lasers
Proceedings of LEOS'94 ; 1 ; 125-126 vol.1
01.01.1994
146487 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Optimization of T~0In GaAs/(Al,Ga)As, Multiple-Quantum- Well, GRINSCH Lasers
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