We measured electron spin relaxation with changing the spatial electron-hole (e-h) separation by applying an electric field in GaAs-AlGaAs quantum wells at room temperature (RT). Even though the electron spin relaxation at RT was previously believed to be independent of any e-h interactions, we found that the electron spin relaxation was drastically suppressed with an increase in the spatial e-h separation. We used a vertical-cavity surface-emitting laser with a separate confinement heterostructure (SCH-VCSEL) having a GaAs-AlGaAs quantum-well (QW) structure in the active region. The photoluminescence (PL) spectrum from the optically excited SCH-VCSEL is shown.


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    Titel :

    Effect of electron-hole interaction on electron spin relaxation in GaAs-AlGaAs quantum wells


    Beteiligte:
    Gotoh, H. (Autor:in) / Ando, H. (Autor:in) / Sogawa, T. (Autor:in) / Kamada, H. (Autor:in) / Kagawa, T. (Autor:in) / Iwamura, H. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    122304 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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