Junction temperature is critical for reflecting the health of power semiconductor devices. However, the junction temperature extraction circuit of SiC MOSFET based on temperature sensitive electrical parameters (TSEPs) are difficult to apply in practical converters. This paper uses a new measurement circuit to extract peak voltage. The circuit can be integrated in the driving circuit, and realizes automatic, accurate and fast online real-time extraction in each switching cycle without additional control signals and is independent of the main circuit electromagnetic interference. Furthermore, the accuracy of the system is verified in the double-pulse test circuit and Boost convertor. The double-pulse test results show that the peak voltage can be accurately extracted and has a sensitivity of −0.32 mV/°C. Importantly, the circuit proposed in the boost converter can also work normally without interference from the main circuit, and has a sensitivity of −0.33 mV/°C, which is basically the same as the double-pulse test circuit.


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    Titel :

    Online Junction Temperature Measurement Of SiC MOSFET In Practical Converters


    Beteiligte:
    He, Minmin (Autor:in) / Yu, Hengyu (Autor:in) / Ding, Yuzhou (Autor:in) / Hu, Bo (Autor:in) / Ke, Zipeng (Autor:in) / Wang, Jun (Autor:in)


    Erscheinungsdatum :

    28.10.2022


    Format / Umfang :

    921712 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch