In this contribution, a detailed discussion on the sensitizing effect of silicon nanoclusters is explored as a means of minimizing induced absorption and increasing the number of optically active erbium ions as a plausible way for realizing an integrated optical amplifier.


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    Titel :

    Light emission and propagation in Er-doped silicon-rich oxide layers


    Beteiligte:
    Forcales, M. (Autor:in) / Wilkinson, A.R. (Autor:in) / Smith, N. (Autor:in) / Elliman, R.G. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    127080 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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