In this paper, we report a new approach to a GaAs-AlGaAs TE/TM beam splitter which permits operation in the III-V materials system. Since III-V semiconductors do not show intrinsic material birefringence, our device is based on the birefringence induced by the electro-optical effect. Specifically, the device utilizes the large difference in propagation constants of the first-higher-order TE mode (TE/sub 01/) and the fundamental TM mode (TM/sub 00/) in the mode-sorting Y-branch.


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    Titel :

    Electronically tunable Mach-Zehnder polarization splitter


    Beteiligte:
    Hu, M.H. (Autor:in) / Huang, J.Z. (Autor:in) / Scarmozzino, R. (Autor:in) / Levy, M. (Autor:in) / Osgood, R.M. (Autor:in)


    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    206616 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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