By measuring the spontaneous emission from normally operating /spl sim/1.3 /spl mu/m GaInNAs/GaAs-based lasers we have quantitatively determined the variation of each of the current paths present in the devices as a function of temperature from 130 K to 370 K.


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    Titel :

    Experimental and theoretical analysis of the recombination processes in GaInNs 1.3 /spl mu/m lasers


    Beteiligte:
    Tomic, S. (Autor:in) / Fehse, R. (Autor:in) / Choulis, S.A. (Autor:in) / O'Reilly, E.P. (Autor:in) / Adams, A.R. (Autor:in) / Sweeney, S.J. (Autor:in) / Andreev, A.D. (Autor:in) / Hosea, T.J.C. (Autor:in) / Riechert, H. (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    145566 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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