By measuring the spontaneous emission from normally operating /spl sim/1.3 /spl mu/m GaInNAs/GaAs-based lasers we have quantitatively determined the variation of each of the current paths present in the devices as a function of temperature from 130 K to 370 K.
Experimental and theoretical analysis of the recombination processes in GaInNs 1.3 /spl mu/m lasers
2002-01-01
145566 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Experimental and Theoretical Analysis of the Recombination Processes in GaInNAs 1.3 mum Lasers
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