This paper presents the design of a Power Electronics Building Block (PEBB) based on 1.7 kV SiC MOSFET power modules. The PEBB is an H-bridge converter module that can be cascaded to construct multilevel converters. Novel designs including gate driver with Rogowski shortcircuit protection, powerful distributed controller, isolated A/D sensor with high common-mode noise rejection, double-side cooling mechanical layout have been achieved. The paper begin with the evolution of PEBB architectures and the specifications of the designed PEBB. It then presents detailed design considerations and solutions of all the critical components. Finally, experimental results demonstrate the excellent performance of the individual components and the PEBB as a unity in various operation modes.


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    Titel :

    Power Electronics Building Block (PEBB) design based on 1.7 kV SiC MOSFET modules


    Beteiligte:
    Wang, Jun (Autor:in) / Shen, Zhiyu (Autor:in) / Cvetkovic, Igor (Autor:in) / Mehrabadi, Niloofar R. (Autor:in) / Marzoughi, Alinaghi (Autor:in) / Ohn, Sungjae (Autor:in) / Yu, Jianghui (Autor:in) / Xu, Yue (Autor:in) / Burgos, Rolando (Autor:in) / Boroyevich, Dushan (Autor:in)


    Erscheinungsdatum :

    01.08.2017


    Format / Umfang :

    2383613 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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