The objective of this paper is to implement a blue emitting GaN-based laser diodes in an external cavity to provide a laser source with emission properties appropriate for high resolution spectroscopy around 410 nm and the optimization procedure with 40 GaN diodes is also described.
Optimization of the antireflection coating of blue GaN laser diodes and their characterization in an external cavity in Littrow and Littman-Metcalf configuration
01.01.2003
55143 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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