Sideband generators (SBGs) are used in the submillimeter region as tunable high-power sources. Unfortunately, as the frequencies approach 1 THz, the performance of single-diode sideband generators deteriorates due to increased series resistance and parasitic capacitance that limits the impedance tuning of the diode. This results in limited output power and reduced carrier-to-sideband conversion efficiency. In this paper, we describe efforts to improve the conversion efficiency and power handling capacity of sideband generators by incorporating multidiode planar structures that permit power-combining techniques to be employed.
Planar multi-diode sideband generators for terahertz applications
2005-01-01
1157588 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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