Selective MOVPE growth of self-assembled InAs quantum dots (QDs) using a SiO/sub 2/ narrow stripe mask array and composition-varied GaInAs layers successfully yielded a variation of size across the array while keeping density.
size and density control of InAs quantum dots by selective MOVPE growth employing stripe mask array and composition-varied GaInAs layer
2005-01-01
146719 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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