Summary form only given. In this paper, we report an all silicon optical receiver operating at 10 Gbps. A high quantum efficiency-bandwidth product was achieved by operating the photodiode in the avalanche regime. Planar p-i-n photodiodes were fabricated using standard CMOS technology on commercially available 2 /spl mu/m SOI substrates. The photodiodes exhibited 3 dB optical bandwidth greater than 8 GHz. At higher bias, avalanche gain was observed. In this work, the photodiode was wire-bonded to a 10 Gbps transimpedance amplifier (TIA).


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    Titel :

    10 Gbps all silicon APD optical receiver


    Beteiligte:
    Yang, B. (Autor:in) / Schaub, J.D. (Autor:in) / Csutak, S.M. (Autor:in) / Campbell, J.C. (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    110186 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch