Theoretical analysis of CdF/sub 2/-CaF/sub 2/ heterostructure intersubband transition lasers on Si substrates was carried out and their threshold current density was estimated. We found that these lasers make 1.35 /spl mu/m operation feasible due to their large conduction band discontinuity at the CdF/sub 2/-CaF/sub 2/ heterointerfaces and the large optical confinement factor they exhibit when Si optical confinement layers are used. With active quantum wells of 10 periods their threshold current density is 350 A/cm/sup 2/ even at room temperature.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Feasibility study of CdF/sub 2//CaF/sub 2/ intersubband transition lasers


    Beteiligte:
    Watanabe, M. (Autor:in) / Sakamaki, N. (Autor:in) / Ishikawa, T. (Autor:in)


    Erscheinungsdatum :

    2001-01-01


    Format / Umfang :

    174455 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Feasibility Study of CdF~2/CaF~2 Intersubband Transition Lasers

    Watanabe, M. / Sakamaki, N. / Ishikawa, T. et al. | British Library Conference Proceedings | 2001


    Relative intensity noise of unipolar intersubband semiconductor lasers

    Mustafa, N. / Pesquera, L. / Shore, K. A. | British Library Conference Proceedings | 2000


    THz modulation bandwidth prediction for intersubband semiconductor lasers

    Mustafa, N. / Pesquera, L. / Cheung, C.Y.L. et al. | IEEE | 1999


    Optically pumped intersubband electron Raman lasers [2886-501]

    Sun, G. / Khurgin, J. B. / Friedman, L. R. et al. | British Library Conference Proceedings | 1996