In the recent years, a great deal of research has been devoted to dead-space effects in avalanche photodiodes (APD) with submicron multiplication regions. Measurements and theoretical models have shown that the multiplication noise in SAM-APDs and in GaAs and InP p/sub +/in/sup +/ APDs decreases when the thickness of the multiplication layer is reduced. We present excess noise measurements of a Si ultraviolet-selective (UVS) APD with a 100 nm thick multiplication region. We show that these results are in excellent agreement with simulations using the dead-space model. The excess noise of our structure is much smaller than predicted by McIntyre's continuum theory.


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    Titel :

    Dead-space effect on noise in Si UV-selective avalanche photodiode


    Beteiligte:
    Pauchard, A. (Autor:in) / Besse, P.A. (Autor:in) / Popovic, R.S. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    170988 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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