Laser annealing of defects to increase bulk laser-induced damage resistance of KDP/DKDP crystals is investigated for a wide range of laser parameters to reveal both the conditions necessary to optimize the effect and the underlying physical mechanisms.
Multi-wavelength investigation of laser-induced defect reactions in KDP leading to enhanced damage resistance
2005 Quantum Electronics and Laser Science Conference ; 3 ; 2041-2043 vol. 3
2005-01-01
735067 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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