The numerical model used in this analysis is of the two-section MQW semiconductor lasers employed in a previous work. We shows the schematic diagram of the numerical model. The laser cavity consists of the gain region and the saturable absorber. The gain region is pumped with 200 ps electrical pulses, and the saturable absorber is reversely biased. We find that the reduction of the carrier leakage and the optimization of the cavity length are significantly important for short pulse generation.
Effect of carrier leakage in Q-switched two-section AlGaAs multiple-quantum-well semiconductor lasers
1999-01-01
136835 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Interdiffused AlGaAs/GaAsP quantum well lasers
British Library Conference Proceedings | 1998
|Visible AlGaAs Quantum Well Lasers Incorporating Superlattice Electron Reflector Carrier Confinement
British Library Conference Proceedings | 1994
|Carrier Leakage in 1.3 m SCH Quantum Well Lasers
British Library Conference Proceedings | 1992
|Carrier leakage in 1.3/spl mu/m SCH quantum well lasers
IEEE | 1992
|Tensile-Strained AlGaAs/GaAsP Single Quantum-Well Lasers
British Library Conference Proceedings | 1994
|