A broad-area flared amplifier has been fabricated which produces 5 W CW at 972 nm in a single-lobed, diffraction-limited far field pattern. A high power, tunable diode laser is used for the injection source with an injected power of /spl sim/115 mW. We believe that the 5 W CW result reported is /spl sim/40% higher power than any reported power for 980 nm flared amplifiers and is the highest diffraction-limited power ever demonstrated from an all-diode source at any wavelength.


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    Titel :

    5 W CW diffraction-limited InGaAs flared amplifier at 980 nm


    Beteiligte:
    O'Brien, S. (Autor:in) / Schoenfelder, A. (Autor:in) / Lang, R.J. (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    133113 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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