We report on the fabrication and performance of N-free InGaAs/GaAs 1.3-/spl mu/m range vertical-cavity surface-emitting lasers (VCSELs). Using optimized quantum-well (QW) growth conditions in combination with negative gain-cavity tuning, high-performance VCSELs with emission wavelength up to 1300 nm are realized. The performance figures include mA-range threshold currents, mW-range singlemode output power, continuous-wave operation up to 140/spl deg/C and 10 Gbit/s data transmission.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    1.3-/spl mu/m InGaAs vertical-cavity surface-emitting lasers


    Beteiligte:
    Hammara, M. (Autor:in) / Marcks, R. (Autor:in) / von Wurtemberg, R.M. (Autor:in) / Sundgren, P. (Autor:in) / Berggren, J. (Autor:in) / Larsson, A. (Autor:in) / Soderberg, E. (Autor:in) / Modh, P. (Autor:in) / Gustavsson, J. (Autor:in) / Ghisoni, M. (Autor:in)


    Erscheinungsdatum :

    2005-01-01


    Format / Umfang :

    224271 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    1.3 mum InGaAs Vertical-Cavity Surface-Emitting Lasers

    IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005


    InGaAs Quantum Well Vertical-Cavity Surface-Emitting Lasers Integration onto Silicon Substrates

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994



    Orange vertical cavity surface emitting lasers

    Lott, J.A. / Malloy, K.J. | IEEE | 1995


    Coupled cavity vertical external cavity surface emitting lasers

    Hessenius, Chris | British Library Conference Proceedings | 2023