We report on the fabrication and performance of N-free InGaAs/GaAs 1.3-/spl mu/m range vertical-cavity surface-emitting lasers (VCSELs). Using optimized quantum-well (QW) growth conditions in combination with negative gain-cavity tuning, high-performance VCSELs with emission wavelength up to 1300 nm are realized. The performance figures include mA-range threshold currents, mW-range singlemode output power, continuous-wave operation up to 140/spl deg/C and 10 Gbit/s data transmission.


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    Titel :

    1.3-/spl mu/m InGaAs vertical-cavity surface-emitting lasers


    Beteiligte:
    Hammara, M. (Autor:in) / Marcks, R. (Autor:in) / von Wurtemberg, R.M. (Autor:in) / Sundgren, P. (Autor:in) / Berggren, J. (Autor:in) / Larsson, A. (Autor:in) / Soderberg, E. (Autor:in) / Modh, P. (Autor:in) / Gustavsson, J. (Autor:in) / Ghisoni, M. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    224271 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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