We report on the fabrication and performance of N-free InGaAs/GaAs 1.3-/spl mu/m range vertical-cavity surface-emitting lasers (VCSELs). Using optimized quantum-well (QW) growth conditions in combination with negative gain-cavity tuning, high-performance VCSELs with emission wavelength up to 1300 nm are realized. The performance figures include mA-range threshold currents, mW-range singlemode output power, continuous-wave operation up to 140/spl deg/C and 10 Gbit/s data transmission.
1.3-/spl mu/m InGaAs vertical-cavity surface-emitting lasers
2005-01-01
224271 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
1.3 mum InGaAs Vertical-Cavity Surface-Emitting Lasers
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