InGaAsP-InP based injection laser diodes operating at 1.55 /spl mu/m are very attractive for optical communication systems. The most common Al containing material used in InP based system is Al/sub y/In/sub 1-y/As which is lattice matched to InP for y values near 0.48. Due to this low Al concentration, the oxidation rate for this material is very slow. As a result, the advantages of selectively oxidized structures can not be easily transferred to devices based on InP substrates. We propose using a short period InAs-AlAs superlattice layer as the buried oxidation layer. A short-period superlattice consisting of 2 monolayers of AlAs and 2 monolayers of InAs are grown right above the active region.


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    Titel :

    Low threshold current 1.55 /spl mu/m lasers using novel selective oxidation of short period superlattice


    Beteiligte:
    Koley, B. (Autor:in) / Saini, S.S. (Autor:in) / King, O. (Autor:in) / Grover, R. (Autor:in) / Johnson, F. (Autor:in) / Dagenais, M. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    178835 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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