The type-II InAs-InGaSb-AlSb interband cascade (IC) laser diode structure has several advantages over the other approaches for the MIR lasers. The type-II IC structure uses interband transitions instead of intersubband, which eliminates the phonon relaxation path while retaining the advantages of electron recycling; therefore, the threshold current density could be much lower.
High-power mid-IR interband cascade lasers
01.01.1998
156759 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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