The type-II InAs-InGaSb-AlSb interband cascade (IC) laser diode structure has several advantages over the other approaches for the MIR lasers. The type-II IC structure uses interband transitions instead of intersubband, which eliminates the phonon relaxation path while retaining the advantages of electron recycling; therefore, the threshold current density could be much lower.


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    Titel :

    High-power mid-IR interband cascade lasers


    Beteiligte:
    Lin, C.-H. (Autor:in) / Zhang, D. (Autor:in) / Yang, B.H. (Autor:in) / Zheng, J. (Autor:in) / Yang, R.Q. (Autor:in) / Pei, S.S. (Autor:in)


    Erscheinungsdatum :

    01.01.1998


    Format / Umfang :

    156759 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    High-Power Mid-IR Interband Cascade Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998


    Mid-IR Interband Cascade Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    Mid-IR interband cascade lasers

    Yang, R.Q. / Yang, B.H. / Zhang, D. et al. | IEEE | 1997


    Thermoelectric Cooled Mid-IR Interband Cascade Lasers

    Hill, C.J. / Mansour, K. / Yueming Qiu, et al. | IEEE | 2006


    High-power mid-IR type-II interband cascade lasers [4042-05]

    Bruno, J. D. / Yang, R. Q. / Bradshaw, J. L. et al. | British Library Conference Proceedings | 2000