The generation of triggered jitter-free ultra-fast electrical pulses is important in precise and ultra-fast bing bang control. Experiments of a lateral semi-insulating GaAs photoconductive semiconductor switch triggered by nanosecond laser pulse were reported. The switches were insulated by solid multi-layer transparent dielectrics. Jitter-free electrical pulse from the 1mm-gap GaAs switches was observed when biased with the low voltage and triggered by the serial laser pulses. Its triggered jitter-time was less than 10ps, and pulse width was up to sub-nanosecond.


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    Titel :

    Investigation of Pico-Second Triggered Jitter-Time Ultra-Fast Electrical Pulses with GaAs Potoconductive Switches


    Beteiligte:
    Ma, Deming (Autor:in) / Wang, Ke (Autor:in) / Liu, Zheng (Autor:in) / Shi, Wei (Autor:in)


    Erscheinungsdatum :

    01.09.2006


    Format / Umfang :

    926045 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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