Novel InGaN-based active regions with improved momentum matrix element were investigated for achieving improved gain and radiative recombination rate. Staggered InGaN quantum wells (QWs) and type-II InGaN-GaNAs QWs demonstrated improvement in radiative recombination rate and optical gain for green spectral regime, and these active regions have the potential to be implemented for high-efficiency green light emitting diodes and lasers.


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    Titel :

    Polarization Engineering of InGaN-Based Nanostructures for Low-Threshold Diode Lasers and High-Efficiency Light Emitting Diodes


    Beteiligte:
    Tansu, Nelson (Autor:in) / Zhao, Hongping (Autor:in) / Arif, Ronald A. (Autor:in) / Ee, Yik-Khoon (Autor:in) / Liu, Guangyu (Autor:in) / Li, Xiaohang (Autor:in) / Huang, G.S. (Autor:in)


    Erscheinungsdatum :

    2008-12-01


    Format / Umfang :

    269697 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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