The purpose of this work is to investigate ion implantations on a two-dimensional optical waveguide structure. The waveguide structure, to be analyzed here consists of an AlGaAs-GaAs MQW on a thick AlGaAs buffer layer.
Single versus double ion implantation defined AlGaAs/GaAs quantum well waveguide
01.01.1997
196186 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Single Versus Double Ion Implantation Defined AlGaAs/GaAs Quantum Well Waveguide
British Library Conference Proceedings | 1997
|THz GaAs/AlGaAs Quantum Well Detector
IEEE | 2006
|Barrier-Doped GaAs/AlGaAs Quantum Well Detector
British Library Conference Proceedings | 1995
|