A detectivity study is presented on an MBE- grown ZnS/sub 0.58/Se/sub 0.42/ UV photodiode system. The noise spectral density, impulse response time, bandwidth, responsivity, dark current at reverse bias up to 12 V and zero bias resistance were determined. A detectivity as high as 7.1/spl times/10/sup 14/ cmHz/sup 1/2/W/sup -1/ has been achieved. A set of devices with single-layer/double-layer anti-reflecting coatings (ARCs) of different thicknesses and compositions were fabricated. The results are in general in good agreement with the prediction from the theories.


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    Titel :

    II-VI ultraviolet detectors: issues of detectivity and antireflection coatings


    Beteiligte:
    Lai, L.S. (Autor:in) / Guo, Z. (Autor:in) / Law, W.Y. (Autor:in) / Sou, I.K. (Autor:in) / Wong, G.K.L. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    230267 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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