A method of maskless selective area epitaxy of InAs quantum dots using underlying InGaAs is presented. By using standard lithography techniques, selective area epitaxy of quantum dots was achieved on In/sub 0.20/Ga/sub 0.80/As layers with a QD density exceeding 3/spl times/10/sup 10/ cm/sup 2/. The advantage of this method lies in the lack of oxide or nitride mask material, allowing for a single regrowth process that is not complicated by any additional thermal dose or growth rate enhancement.
Metalorganic vapor phase epitaxy of quantum dots
01.01.2001
281419 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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