A method of maskless selective area epitaxy of InAs quantum dots using underlying InGaAs is presented. By using standard lithography techniques, selective area epitaxy of quantum dots was achieved on In/sub 0.20/Ga/sub 0.80/As layers with a QD density exceeding 3/spl times/10/sup 10/ cm/sup 2/. The advantage of this method lies in the lack of oxide or nitride mask material, allowing for a single regrowth process that is not complicated by any additional thermal dose or growth rate enhancement.
Metalorganic vapor phase epitaxy of quantum dots
2001-01-01
281419 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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