A method of maskless selective area epitaxy of InAs quantum dots using underlying InGaAs is presented. By using standard lithography techniques, selective area epitaxy of quantum dots was achieved on In/sub 0.20/Ga/sub 0.80/As layers with a QD density exceeding 3/spl times/10/sup 10/ cm/sup 2/. The advantage of this method lies in the lack of oxide or nitride mask material, allowing for a single regrowth process that is not complicated by any additional thermal dose or growth rate enhancement.


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    Titel :

    Metalorganic vapor phase epitaxy of quantum dots


    Beteiligte:
    Coleman, J.J. (Autor:in) / Yeoh, T.S. (Autor:in)


    Erscheinungsdatum :

    2001-01-01


    Format / Umfang :

    281419 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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