In spite of the almost ideal variation of the radiative current of 1.3 /spl mu/m GaAsSb/GaAs-based lasers, the threshold current, J/sub th/, is high due to non-radiative recombination accounting for 90% J/sub th/ near room temperature. This also gives rise to low T/sub 0/ values /spl sim/60 K close to room temperature, similar to that for InGaAsP/InP.


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    Titel :

    On the thermal stability of 1.3 /spl mu/m GaAsSb/GaAs-based lasers


    Beteiligte:
    Hild, K. (Autor:in) / Sweeney, S.J. (Autor:in) / Lock, D.A. (Autor:in) / Wright, S. (Autor:in) / Wang, J.-B. (Autor:in) / Johnson, S.R. (Autor:in) / Zhang, Y.-H. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    183814 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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