In spite of the almost ideal variation of the radiative current of 1.3 /spl mu/m GaAsSb/GaAs-based lasers, the threshold current, J/sub th/, is high due to non-radiative recombination accounting for 90% J/sub th/ near room temperature. This also gives rise to low T/sub 0/ values /spl sim/60 K close to room temperature, similar to that for InGaAsP/InP.
On the thermal stability of 1.3 /spl mu/m GaAsSb/GaAs-based lasers
01.01.2005
183814 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
On the Thermal Stability of 1.3mum GaAsSb/GaAs-based Lasers
British Library Conference Proceedings | 2005
|GaAsSb-(In)GaAsN Type-II Quantum-Well Lasers on GaAs Substrate
British Library Conference Proceedings | 2003
|Optical Properties of GaAsSb/GaAs Quantum Wells
British Library Conference Proceedings | 2003
|