We present a room-temperature 1.3-μm InAs/GaAs quantum dot laser monolithically grown on Si(100). The threshold current at 20°C was 725A/cm2 and the emission wavelength was 1.302μm. The laser was operated in pulsed mode. The growth was enabled via the optimisation of the temperature of the initial nucleation layer of GaAs.


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    Titel :

    A room temperature electrically pumped 1.3-µm InAs quantum dot laser monolithically grown on silicon substrates


    Beteiligte:
    Lee, A. D. (Autor:in) / Wang, T. (Autor:in) / Pozzi, F. (Autor:in) / Seeds, A. J. (Autor:in) / Liu, H. (Autor:in)


    Erscheinungsdatum :

    01.09.2011


    Format / Umfang :

    376240 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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