Effect of p-doping on carrier leakage and characteristic temperature T/sub 0/ of 1.3 /spl mu/m strained lnGaAsP/lnP multiple quantum well lasers
01.01.1997
147588 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Characteristic analysis of InGaAs/InGaAsP strained quantum well lasers
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