Summary form only given. Tapered semiconductor amplifiers have successfully demonstrated high-power diffraction-limited emission. So far, all these amplifiers had normal incidence facets coated with antireflection (AR) coating to prevent self-oscillation. In this work, an angled-facet high-power diffraction-limited tapered GaAs-AlGaAs QW semiconductor amplifier operating at 809-nm was realized. Due to the angled facet structure, any residual reflection from the facets is fed back at a small angle with the signal propagation direction.


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    Titel :

    Angled-facet high-power diffraction-limited tapered semiconductor amplifier


    Beteiligte:
    Yeh, P.S. (Autor:in) / Lu, C.C. (Autor:in) / Merritt, S. (Autor:in) / Heim, P. (Autor:in) / Cho, S.H. (Autor:in) / Dauga, C. (Autor:in) / Fox, S. (Autor:in) / Wood, C.E.C. (Autor:in) / Dagenais, M. (Autor:in)

    Erschienen in:

    Proceedings of LEOS'94 ; 2 ; 399-400 vol.2


    Erscheinungsdatum :

    01.01.1994


    Format / Umfang :

    153602 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch