We investigated strain-induced effects on the lasing condition of a strained AlGalnP laser in comparison with an unstrained device having similar band structure. Clear reduction in the threshold current density was observed by incorporating the strained quantum well structure.


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    Titel :

    Strain-induced effects on the performance of AlGalnP Visible Lasers


    Beteiligte:
    Hashimoto, J. (Autor:in) / Katsuyama, T. (Autor:in) / Shinkai, J. (Autor:in) / Yoshida, I. (Autor:in) / Hayashi, H. (Autor:in)


    Erscheinungsdatum :

    1992-01-01


    Format / Umfang :

    165729 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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