An intersubband-transition (ISB-T) in a semiconductor quantum well (QW) has been drawing much attention due to its unique characteristics such as ultrafast energy relaxation time (/spl sim/1 ps) and large transition probability. In this paper, we report for the first time a picosecond range all-optical modulation by using a free electron laser (FEL) as the ISB-light. This has become possible by the attractive features ofthe FEL such as ultra-short pulse operation, wide tunability of the lasing wavelength, and high peak power keeping the average power low. The sample utilized for the experiment has a multiple quantum well structure with 30 periods of GaAs wells and Al/sub 0.3/Ga/sub 0.7/As barrier layers grown by molecular-beam epitaxy on a GaAs substrate, where the barrier layers were selectively n-doped with Si.


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    Titel :

    Observation of ultrafast interband-light modulation by intersubband-light in n-doped quantum wells by using free electron laser


    Beteiligte:
    Mitsuyu, T. (Autor:in) / Suzuki, T. (Autor:in) / Nishi, K. (Autor:in) / Ohyama, H. (Autor:in) / Tomimasu, T. (Autor:in) / Noda, S. (Autor:in) / Asano, T. (Autor:in) / Sasaki, A. (Autor:in)


    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    158640 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Observation of Ultrafast Interband-Light Modulation by Intersubband-Light in n-Doped Quantum Wells by Using Free Electron Laser

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


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    Intersubband vs interband-light coupling in semiconductors

    Pereira, M.F. | British Library Online Contents | 2008


    Ultrafast all optical modulation based on intersubband transition in semiconductor quantum wells

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