Bottom emitting 1.3 /spl mu/m GaAsSb resonant-cavity light-emitting diodes (RCLEDs) on GaAs that exhibit superior performance in spectral linewidth, beam shape and characteristic temperature are demonstrated. These devices have the potential for high-speed operation and show great promise to replace conventional InP based LEDs for optical data-communication modules.


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    Titel :

    1.3 /spl mu/m GaAsSb resonant-cavity light-emitting diodes grown on GaAs substrate


    Beteiligte:
    Jin, X. (Autor:in) / Yu, S.-Q. (Autor:in) / Cao, Y. (Autor:in) / Ding, D. (Autor:in) / Wang, J.-B. (Autor:in) / Samal, N. (Autor:in) / Sadofyev, Y. (Autor:in) / Johnson, S.R. (Autor:in) / Zhang, Y.-H. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    122960 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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