This report discusses the growth of new strain-balanced InAsP, InP, and InGaAs multiple quantum well structures with +2.0% strained InAsP wells, InP barriers, and -2.0% strained InGaAs layers for mid-infrared quantum well infrared photodetectors.


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    Titel :

    Growth of strain-balanced InAsP/InP/InGaAs multiple quantum well structures for mid-infrared photodetectors


    Beteiligte:
    Wada, M. (Autor:in) / Araki, S. (Autor:in) / Kudou, T. (Autor:in) / Ueda, T. (Autor:in)


    Erscheinungsdatum :

    01.01.2001


    Format / Umfang :

    228347 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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