This report discusses the growth of new strain-balanced InAsP, InP, and InGaAs multiple quantum well structures with +2.0% strained InAsP wells, InP barriers, and -2.0% strained InGaAs layers for mid-infrared quantum well infrared photodetectors.
Growth of strain-balanced InAsP/InP/InGaAs multiple quantum well structures for mid-infrared photodetectors
2001-01-01
228347 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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