This report discusses the growth of new strain-balanced InAsP, InP, and InGaAs multiple quantum well structures with +2.0% strained InAsP wells, InP barriers, and -2.0% strained InGaAs layers for mid-infrared quantum well infrared photodetectors.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Growth of strain-balanced InAsP/InP/InGaAs multiple quantum well structures for mid-infrared photodetectors


    Beteiligte:
    Wada, M. (Autor:in) / Araki, S. (Autor:in) / Kudou, T. (Autor:in) / Ueda, T. (Autor:in)


    Erscheinungsdatum :

    2001-01-01


    Format / Umfang :

    228347 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Growth of Strain-Balanced InAsP/InP/InGaAs Multiple Quantum well Structures for Mid-Infrared Photodetectors

    Wada, M. / Araki, S. / Kudou, T. et al. | British Library Conference Proceedings | 2001


    Excitonic Absorption Saturation in a Strain-Balanced InGaAs/InAsP MQW

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    Photoresponse of InGaAs/GaAs multiple-period very-long-wavelength quantum well infrared photodetectors

    Lu, X. Q. / Xiong, D. Y. / Tong, X. | British Library Online Contents | 2015



    Multi-Spectral Operation of InGaAs Quantum Dot Infrared Photodetectors and Infrared Sensors Applications

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004