The beam quality in high-power semiconductor lasers are generally limited by filamentation and weak lateral mode control. The use of grating has recently been explored in a variety of ways. The /spl alpha/-DFB laser in particular has been demonstrated to have diffraction limited beam qualities and high power levels. The optical cavity of the /spl alpha/-DFB laser is shaped like a parallelogram several hundred microns wide by a few millimeters long. A wide stripe of grating is etched along the length of the cavity and oriented at an angle to the facets.


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    Titel :

    Spectral properties of angled-grating high-power semiconductor lasers


    Beteiligte:
    Sarangan, A.M. (Autor:in) / Wright, M. (Autor:in) / Marciante, J.R. (Autor:in) / Bossert, D.J. (Autor:in)


    Erscheinungsdatum :

    01.01.1998


    Format / Umfang :

    136163 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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