Summary form only given. From a previous work we reported over 100 mW maximum chip power from 500 /spl mu/m cavity length 1550 nm DFB lasers using strained quantum well structures. To further increase optical power, we designed a 1000 /spl mu/m cavity length laser with a K value reduced by one half. There are several factors contributing to the control of the K value: the guiding layer composition and/or thickness, the separation between active and guiding layer, the grating duty cycle and the separate confinement structure.
High power 1550 nm DFB lasers for long distance video transmission
01.01.1997
117421 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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