A comparison of the wavelength shift of the vertical external-cavity surface-emitting laser (VECSEL) spectrum with increasing pump power reveals silicon carbide to be a far superior heat spreader material to previously used sapphire. We have demonstrated 0.5W with no rollover from a GaAs VECSEL by utilising an intra-cavity silicon carbide heat spreader. We believe that with increased pump power, the use of silicon carbide heat spreaders will provide a useful expedient to extend the available output power of VECSEL systems.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    A 0.5W, 850nm Al/sub x/Ga/sub 1-x/As VECSEL with intra-cavity silicon carbide heat spreader


    Beteiligte:
    Hastie, J.E. (Autor:in) / Jeon, C.W. (Autor:in) / Burns, D. (Autor:in) / Hopkins, J.-M. (Autor:in) / Calvez, S. (Autor:in) / Abramb, R. (Autor:in) / Dawson, M.D. (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    146854 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




    High Power Ultraviolet VECSEL through Intra-Cavity Frequency-Doubling in BBO

    Hastie, J.E. / Morton, L.G. / Kemp, A.J. et al. | IEEE | 2006


    850nm VCSELs for 10Gb/s operation

    Iwai, N. / Yokouchi, N. / Kasukawa, A. | IEEE | 2002


    High Density, High Power Arrays of Vertical Cavity Surface Emitting Lasers Operating at 850nm

    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995


    Characterization of 850nm AlGaAs/GaAs implant vertical cavity emitting lasers utilizing silicon implantation induced disordering

    Kuo, H. C. / Shu, W. C. / Lu, T. C. et al. | British Library Conference Proceedings | 2003