Summary form only given. In this paper, we present data showing a temperature-driven hysteresis effect in the modulator bias and describe a model for its transient behavior based on the pyroelectric effect and an anomalous change in the temperature-dependent electrical conductivity. Our experiments suggest that these devices will require active bias control or some degree of temperature stabilization to maintain constant modulation depth and linearity in analog applications especially when operating with low bias to increase the linear dynamic range.
Temperature-dependent bias drift in proton-exchanged lithium niobate Mach-Zehnder modulators
1999-01-01
290773 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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