HgCdTe long-wavelength infrared (LWIR) photodiodes have been successfully fabricated using plasma induced junction formation. The performance of the devices were characterised through I-V measurements and analysed by modelling the dark current mechanisms which determine the I-V characteristic. Analytical models were used and a very close fit to the measured data at 80 K was achieved. The model included the effects of diffusion, trap-assisted tunnelling, band-to-band tunnelling, generation-recombination, and surface leakage current. The dark current modelling has identified material defects and non-ideal surface passivation as the factors limiting performance in HgCdTe LWIR photodiodes fabricated using plasma induced junction formation.


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    Titel :

    Modelling of dark currents in LWIR HgCdTe photodiodes


    Beteiligte:
    Nguyen, T. (Autor:in) / Musca, C.A. (Autor:in) / Dell, J.M. (Autor:in) / Antoszewski, J. (Autor:in) / Faraone, L. (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    253945 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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