HgCdTe long-wavelength infrared (LWIR) photodiodes have been successfully fabricated using plasma induced junction formation. The performance of the devices were characterised through I-V measurements and analysed by modelling the dark current mechanisms which determine the I-V characteristic. Analytical models were used and a very close fit to the measured data at 80 K was achieved. The model included the effects of diffusion, trap-assisted tunnelling, band-to-band tunnelling, generation-recombination, and surface leakage current. The dark current modelling has identified material defects and non-ideal surface passivation as the factors limiting performance in HgCdTe LWIR photodiodes fabricated using plasma induced junction formation.
Modelling of dark currents in LWIR HgCdTe photodiodes
01.01.2002
253945 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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