A vertical microcavity InGaAs strained quantum wire laser was fabricated for the first time, using MOCVD selective growth. The cavity length is 4/spl lambda/ (/spl lambda/=883nm) and the lateral width of the quantum wire is about 10nm. The cavity effect was evidenced by the difference of the photoluminescence broadening with and without the cavity. Lasing was observed at 77K by using optical pumping. Various theoretical issues on quantum nanostructure lasers including bottleneck problem and microcavity effects are also discussed in the paper.
Fabrication and physics of microcavity quantum wire lasers
Proceedings of LEOS'94 ; 1 ; 271-273 vol.1
01.01.1994
236100 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Fabrication and Physics of Microcavity Quantum Wire Lasers
British Library Conference Proceedings | 1994
|British Library Conference Proceedings | 2002
|Photonic crystal microcavity lasers
IEEE | 2004
|Recent advances in microcavity disk lasers and photonic wire lasers (Invited Paper) [2891-515]
British Library Conference Proceedings | 1996
|Microcavity Lasers Using Crystal Facets
IEEE | 1997
|