In this report we will discuss extremely low dark current, 2% lattice-mismatched InGaAs p-i-n photodiodes with high detectivity over a near-infrared wavelength range of 1-2.5 /spl mu/m and their application for a high SNR FT-NIR spectrometer.


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    Titel :

    Low dark current InGaAs p-i-n photodiodes with wide sensing wavelength range from 1 to 2.5 /spl mu/m for high SNR FT-NIR spectroscopy


    Beteiligte:
    Umezawa, T. (Autor:in) / Kudo, T. (Autor:in) / Araki, S. (Autor:in) / Nakajima, S. (Autor:in) / Sakakibara, K. (Autor:in) / Wada, M. (Autor:in)


    Erscheinungsdatum :

    2001-01-01


    Format / Umfang :

    162769 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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