In this report we will discuss extremely low dark current, 2% lattice-mismatched InGaAs p-i-n photodiodes with high detectivity over a near-infrared wavelength range of 1-2.5 /spl mu/m and their application for a high SNR FT-NIR spectrometer.
Low dark current InGaAs p-i-n photodiodes with wide sensing wavelength range from 1 to 2.5 /spl mu/m for high SNR FT-NIR spectroscopy
2001-01-01
162769 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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