The output power of GaN-based near ultraviolet stripe patterned sapphire substrate (PSS) LEDs was 20 % higher than that of the conventional LEDs. The possible mechanism of this enhancement will be discussed in this report.


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    Titel :

    Improvement in light-output efficiency of Near-Ultraviolet InGaN– GaN LEDs Fabricated on Stripe Patterned Sapphire Substrate


    Beteiligte:
    Lee, Y.J. (Autor:in) / Hsu, T.C. (Autor:in) / Kuo, H.C. (Autor:in) / Wang, S.C. (Autor:in) / Yang, Y.L. (Autor:in) / Yen, S.N. (Autor:in) / Chu, Y.T. (Autor:in) / Shen, Y.J. (Autor:in) / Hsieh, M.H. (Autor:in) / Jou, M.J. (Autor:in)


    Erscheinungsdatum :

    2005-01-01


    Format / Umfang :

    215840 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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