The output power of GaN-based near ultraviolet stripe patterned sapphire substrate (PSS) LEDs was 20 % higher than that of the conventional LEDs. The possible mechanism of this enhancement will be discussed in this report.
Improvement in light-output efficiency of Near-Ultraviolet InGaN– GaN LEDs Fabricated on Stripe Patterned Sapphire Substrate
2005-01-01
215840 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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