Summary form only given. The bandwidth/efficiency of traditional vertically-illuminated metal-semiconductor-metal (MSM) photodetectors are limited by the RC time constant, the carrier drift time, and the carrier recombination time. In order to shorten the carrier transit/recombination time, 25 nm finger spacing has been fabricated by using high resolution e-beam lithography on low-temperature (LT) GaAs.


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    Titel :

    Metal-semiconductor-metal travelling wave-photodetectors


    Beteiligte:
    Jin-Wei Shi, (Autor:in) / Chi-Kuang Sun, (Autor:in) / Ying-Jay Yang, (Autor:in)


    Erscheinungsdatum :

    1999-01-01


    Format / Umfang :

    302244 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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