Summary form only given. The bandwidth/efficiency of traditional vertically-illuminated metal-semiconductor-metal (MSM) photodetectors are limited by the RC time constant, the carrier drift time, and the carrier recombination time. In order to shorten the carrier transit/recombination time, 25 nm finger spacing has been fabricated by using high resolution e-beam lithography on low-temperature (LT) GaAs.
Metal-semiconductor-metal travelling wave-photodetectors
1999-01-01
302244 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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