In communications, optical amplification introduces noise in the system through amplified spontaneous emission (ASE), which degrades the system performance. The non-linear transmission characteristics of semiconductor absorbers can be adjusted to substantially improve the extinction ratio of an optical data sequence and remove low intensity noise over a wide spectral range. By combining an optical amplifier with a non-linear gate based on a semiconductor saturable absorber one can make a compact device with excellent characteristics. we report on a monolithic all-optical discriminator that operates in the 1.55-/spl mu/m spectral range in the reflection mode. The performance of the discriminator/gate was tested in two-stage amplifier system. Efficient ASE suppression is demonstrated by applying a closely optimized MQW structure.


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    Titel :

    Vertical-cavity semiconductor discriminator for amplified spontaneous emission


    Beteiligte:
    Isomaki, A. (Autor:in) / Vainionpaa, A. (Autor:in) / Lyytikainen, J. (Autor:in) / Okhotnikov, O.G. (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    136554 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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