Superluminescent diodes with broad emission bandwidth characteristics and the mechanism of carrier distribution in the active layer are explored. Using InP substrate with five 6 nm InGaAsP quantum wells and two 15 nm InGaAs quantum wells, we get a very broad emission spectrum. The spectral width is nearly 400 nm, almost covering the range from 1250 nm to 1650 nm.
Extremely broadband superluminescent diodes/semiconductor optical amplifiers in optical communication band
01.01.2003
67400 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 2003
|British Library Conference Proceedings | 2001
|Angled Stripe Superluminescent Diodes
IEEE | 1990
|Extremely high power and high performance superluminescent diodes and modules at 800 nm
British Library Conference Proceedings | 1994
|