Superluminescent diodes with broad emission bandwidth characteristics and the mechanism of carrier distribution in the active layer are explored. Using InP substrate with five 6 nm InGaAsP quantum wells and two 15 nm InGaAs quantum wells, we get a very broad emission spectrum. The spectral width is nearly 400 nm, almost covering the range from 1250 nm to 1650 nm.


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    Titel :

    Extremely broadband superluminescent diodes/semiconductor optical amplifiers in optical communication band


    Beteiligte:
    Chia-Wei Tsai, (Autor:in) / Shmavonyan, G.Sh. (Autor:in) / Yi-Shin Su, (Autor:in) / Ching-Fuh Lin, (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    67400 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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